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Application of x-ray reflectometry in study of nonideal Si/Si1−x-Gex superlattices (1992)

Baribeau, J.-M.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 4452-4454

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: X-ray reflectometry and double-crystal diffraction have been applied to the characterization of molecular beam epitaxy-grown Si/Si1−xGex superlattices. It is shown, using specific examples, how reflectometry can help to solve difficulties encountered in double-crystal diffractometry analysis of nonideal superlattices that contain thickness fluctuations or in which partial strain relaxation has occurred.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.352185

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