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Barrier height lowering of Schottky contacts on AlInAs layers grown by metal-organic chemical-vapor deposition (1993)

Fujita, Shinobu ; Naritsuka, Shigeya ; Noda, Takao ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 73 (1993), S. 1284-1287

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Schottky characteristics of undoped AlInAs grown by metal-organic chemical-vapor deposition have been investigated. I-V characteristics and their dependence on donor concentrations in AlInAs layers were explained well by assuming the existence of an interfacial layer. The presence of oxygen atoms at the metal-AlInAs interface was revealed by Auger electron spectroscopy measurements. The oxide formation on AlInAs surface may be an inevitable result because of the high composition of aluminum atoms in AlInAs. Reduction in donor concentration in AlInAs layers is effective in minimizing the influence of the interfacial layer on barrier height lowering. Reduction in gate leakage current was successfully demonstrated for fabricated GaInAs/AlInAs high-electron-mobility transistors by reducing donor concentration in AlInAs Schottky layers.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.353245

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