ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The ion-induced secondary electron emission coefficient γ from the a-Si:H film deposited from a SiH4 glow discharge is measured in situ using an electrostatic grid analyzer. At low SiH4 pressure and discharge power density, γ≈0.033±0.004 and the overall electrical power dissipation does not vary with the gas and wall temperature between 25 and 250 °C, when the SiH4 molecular density is kept constant. However, the a-Si:H film deposition rate does depend on the temperature, which reveals the effects of thermally activated gas phase of H and SiH2 radicals arising from SiH4 dissociation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.353070