Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 2543-2547
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The morphology and redistribution of dopants at the interfaces between silicon-implanted, low-pressure chemical-vapor-deposited silicon films with an n+ single-crystal silicon substrate are described. Using high-resolution transmission electron microscopy, it is shown that silicon implantation definitely lowers the annealing temperature needed to break up the native oxide layer. A post annealing temperature of 900 °C for 30 min, which is acceptable for sub-μm processes, is sufficient to cause the break up of the native oxide layer and the subsequent epitaxial growth through it with the aid of silicon implantation. The depth profile obtained by secondary ion mass spectrometry shows that the implanted dopants were piled up at the interfacial layer after thermal treatment. The redistributed profiles of impurities depend on the concentration of oxygen. The junction depth of the silicon-implanted polysilicon films is shallower than that of the unimplanted films.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.353088
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