Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 6251-6255
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial PtSi/p-Si(100) contacts were fabricated by co-depositing Pt and Si on p-Si(100) at 450 °C in a dual electron gun chamber at a base pressure of 10−10 Torr. The PtSi/p-Si(100) film possessed six types of epitaxial modes, as indicated in the electron diffraction patterns. The average grain size of the PtSi grains was measured to be 100–300 A(ring) through the Moiré fringe image. The Schottky barrier height of the epitaxial PtSi/p-Si(100) diode was determined to be 0.249 eV at 100 K, with an ideality factor of 1.04. In contrast to this, the Schottky barrier height of the polycrystalline PtSi/p-Si(100) diode was 0.229 eV at 100 K, with an ideality factor of 1.05. The difference in Schottky barrier height was attributed to the difference in the atomic arrangement at interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355168
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