ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the measurement of the diffusion length damage coefficient (KL) and the annealing characteristics of the minority carrier diffusion length (Ln) in Czochralski-grown zinc-doped indium phosphide (InP), with a carrier concentration of 1×1018 cm−3. In measuring KL, irradiations were made using 0.5 MeV protons with fluences ranging from 1×1011 to 3×1013 cm−2. Pre-and post-irradiation electron-beam induced current measurements allowed for the extraction of Ln, from which KL was determined. In studying the annealing characteristics of Ln, irradiations were made with 2 MeV protons with a fluence of 5×1013 cm−2. Post-irradiation studies of Ln with time at room temperature, and with minority carrier photoinjection and forward-bias injection were carried out. The results showed that recovery under Air Mass Zero photoinjection was complete. Ln was also found to recover under forward-bias injection, where recovery was found to depend on the value of the injection current. However, no recovery of Ln after proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electron-irradiated InP solar cells reported previously.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355110
