Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 7306-7310
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have found that a nonquantizing weakly p-doped InP/Ga0.47In0.53As/InP heterostructure exhibits a photovoltage as high as 2 V at 120 K for moderate light excitation power densities of a few mW/cm2. The back electrical contact is ohmic and the front rectifying contact is established through a thin silver layer. We have monitored as a function of reverse bias applied to the structure the internal photoemission current and also the external photoemission current, due to electrons emitted into vacuum after lowering the surface work function by cesium and oxygen adsorption. Both of these dependences exhibit strong effects of the excitation power density. The dependence of the photovoltage as a function of external bias is obtained using photoreflectance. As shown by a simple model, this gigantic photovoltage arises from accumulation of photoexcited carriers in the Ga0.47In0.53As layer because of the existence of energy barriers with the neighboring InP layers. The different electron and hole transfer probabilities across these barriers result in a strong change of the potential of the Ga0.47In0.53As layer under light excitation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354996
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