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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1625-1628 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X, Y, and Z crystalline cut LiNbO3 crystals were implanted by 1.0 MeV F ions with a dose of 1×1015 ions/cm.2 The virgin and implanted LiNbO3 crystals were investigated using the Rutherford backscattering/channeling technique. The obtained minimum yields of virgin crystals were 4%, 8%, and 6% for X-, Y-, and Z-cut LiNbO3 crystals, respectively, because of their different arrangements of lattice sites in channeling direction. The measured damage profiles are also influenced by the arrangement of lattice sites in channeling measurements. The damage profiles of X-cut LiNbO3 crystal induced by 1.0 MeV F+ at a fluence range of 1×1014–3×1015 ions/cm2 have been studied and compared with the Transport of Ions in Matter, version 1990 calculation. It has been found that not only the nuclear energy deposition but also the electronic energy deposition influences the defect production.
    Type of Medium: Electronic Resource
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