Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 3298-3302
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new method for the characterization of the SOI separation by implanted oxygen (SIMOX) oxide is presented. It is based on the fact that the buried oxide can be polarized by applying a bias in the substrate of the structure. In the process of relaxation, current transients are induced in the Si film, which can be monitored by the rate window technique. The experiment reveals that the relaxation process is thermally activated with one or more time constants. These properties of the SIMOX oxide are attributed to the high metal concentration of the oxide.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354552
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