Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 7247-7251
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Arsenic (As) and boron (B) ions were implanted into silicon (Si) at energies such that their projected ranges coincided. The implanted Si was annealed in argon gas at a temperature of 950 °C for 30 or 300 min. The activation efficiency of the implanted As atoms decreased with an increase in the implant dose of the B ions, and the diffusivity of the As atoms decreased. On the other hand, the diffusivity of the B atoms decreased with an increase in annealing time.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356659
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