ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The electrical characteristics of rapid thermal nitrided and reoxidized plasma-enhanced chemical-vapor-deposited (PECVD) silicon dioxide metal-oxide-silicon (MOS) structures were investigated. Both nitridation temperature and time affect the properties of the MOS structures as revealed by capacitance-voltage (C-V) characteristics. Nitridation at 1000 °C for 60 s followed by reoxidation for 60 s at 1000 °C in an oxygen/nitrogen ambient was found to be superior to the same nitridation followed by reoxidation in pure oxygen. Typical values of fixed charge and interface state densities for devices subjected to nitridation and reoxidation in a mixture of oxygen and nitrogen were 4×1010 cm−2 and 7×1010 eV−1 cm−2, respectively. Avalanche electron injection using electric fields of 3–5 MV/cm produced negative shifts in flatband voltage for low fluence levels and positive flatband voltage shifts for larger fluence levels. Furthermore, the magnitudes of both positive and negative shifts and the electron fluence level at which turnaround occurs increase with electric field. However, independent of the electric field, the flatband voltage saturates very close to its preinjection value. These results strongly suggest that device quality MOS dielectrics can be realized by nitridation/reoxidation of PECVD oxide. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357910
