Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 1980-1982
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have measured the low-temperature mobility of high-quality two-dimensional hole systems confined at the (311)A GaAs/AlxGa1−xAs interface. Variables were the thickness of the spacer layer separating the carriers from the Si dopants, and the carrier sheet density. A large anisotropy in mobility is found between the [2¯33] and [011¯] directions. While the high mobility [2¯33] direction yields results analogous to the two-dimensional electron case, we conclude that transport along [011¯] is almost entirely determined by anisotropic interface roughness scattering.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.358419
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