Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 5318-5326
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The electronic structures of semimetal-semiconductor (Sb2)m/(GaSb)n (111) and (Sb2)m/(AlSb)n (111) (m,n≤10) superlattices are calculated by using a tight-binding theory including spin-orbit interaction. It is found that a narrow gap forms in these materials due to the quantum confinement effect. This may allow strong optical nonlinearity in the infrared region. With increasing the thickness of the Sb layer, a possible semiconductor-semimetal transition is suggested at a certain thickness. The influence of interface states on the formation of the band gap is investigated by adjusting the interface relaxation and band offsets. Our study shows that semimetal-semiconductor Sb/Ga(Al)Sb superlattices could potentially open a new possibility in electro-optical device manufactures.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.357183
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