Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
77 (1995), S. 3453-3457
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-energy synchrotron-radiation (SR) light was applied to the photochemical-vapor deposition of amorphous carbon films. The source gases of CH4 and H2 have been directly photodissociated by the ultraviolet SR light to deposit carbon films on the heated Si substrate. The film structure was characterized by field-emission scanning electron microscopy, Raman scattering, and infrared absorption, which indicate the film to be a rigid amorphous structure comprised of mostly sp3-bonded carbon. The advantage as well as the limitation of the synchrotron-radiation process to the synthesis of functional materials is discussed. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.358639
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