ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Vacuum evaporation techniques were applied to the epitaxial growth of CrSi2 on Si(111) substrates. There are two CrSi2 matching faces which offer good lattice matchings, and which are observed experimentally: the (001) and the (111). These are present together in films grown by reactive deposition at temperatures from 450 to 1000 °C, with the latter matching face becoming more dominant as the growth temperature is raised. During an anneal at 1100 °C, however, the regions of the (111) matching face disappear in films ≥∼84 A(ring) thick. Moderately good epitaxial alignment is obtained with the other matching face operative. Films ≤∼30 A(ring) thick yield an opposite result: they adopt exclusively the (111) matching face as a result of this anneal. For both heteroepitaxial relationships, a strong islanding tendency is manifested during growth (unless the CrSi2 layer is more than a few thousands of angströms thick), which is accentuated by such a post-growth anneal. The population of CrSi2 islands exhibits a gradual strain relaxation with increasing average island size. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359539
