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High-resolution x-ray diffractometry of ZnTe layers at elevated temperatures (1995)

Bochnícek, Z. ; Holý, V. ; Wolf, K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 862-867

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A high-temperature multicrystal x-ray diffractometer is used for measurement of elastic constants c11, c12 and the thermal-expansion coefficient of a heteroepitaxial ZnTe layer grown on a (001) oriented GaAs substrate. In addition to the standard double-crystal measurement, a new triple-crystal method is proposed. This method eliminates the angular instabilities of the high-temperature goniometer and bending of the substrate. The new method was used for determination of the thermal-expansion coefficient of a GaAs substrate. As a result of detailed discussion, the optimal experimental conditions are proposed for the limitation of the errors. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360276

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