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Low-temperature photochromic response of phosphorus-doped bismuth silicon oxide (1995)

McCullough, J. S. ; Harmon, Angela ; Martin, J. J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 2010-2014

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Phosphorus is one of several dopants that electronically compensate the native deep donor responsible for the yellow coloration observed in bismuth silicon oxide (BSO). Low-temperature optical absorption measurements of a series of Czochralski-grown P-doped BSO crystals show that ∼0.1–0.15 at. % P is needed in the sample to fully remove the yellow coloration. The absorption cutoff in the fully compensated P-doped sample was at 3.2 eV while compensated Al- and Ga-doped samples cutoff at 3.35 eV. Excitation at 10–15 K with near band-edge light produces photochromic absorption bands. In the lightly-doped (partially bleached) samples these bands were identical to those observed in undoped BSO. In the fully bleached sample a new spectrum was observed. Its major contribution was a band centered near 1.8 eV with a weaker absorption in the blue-green. By comparison with the spectra observed in undoped and in Al-doped material before and after photoexcitation it is believed that the 1.8 eV band is due to the [PO4]− center and that the broad 2.45 eV band observed in Al- and Ga-doped BSO is due to the [BiO4]0 center. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360176

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