ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
X-ray diffraction has been used to characterize the heteroepitaxial growth of indium formed at the interfaces between ZnO thin film and InP monocrystalline substrates. The In formation was induced by a thermal degradation of InP during annealing in the range of 400–700 °C for 3 min. The results prove that the evolution of the degradation is controlled by the decomposition of close-packed InP{111} planes, while the polar character of these planes plays a very important role. Moreover, for all four employed orientations of InP substrates [namely (111)A, (111)B, (110) and (100)], In is found to grow (101) on InP{111} planes. On an InP{111} interface plane, In crystallites can occur in six possible orientations characterized by a condition In〈100〉(parallel)InP〈110〉. To estimate a mismatch of the heteroepitaxy, a geometrical model of the atomic arrangement at In(101)-InP(111) interface is given. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363696
