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Effect of disorder-induced band mixing on the conduction-band effective mass of InAlGaAs alloys lattice matched to InP (1996)

Fan, J. C. ; Chen, Y. F.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 1239-1241

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: It is found that the calculation of the effective mass for InAlGaAs alloys obtained from the five-band k⋅p theory is smaller than the measured value from the optically detected cyclotron resonance reported recently. We point out that the effect of disorder-induced conduction valence band mixing must be considered. This disorder effect which creates potential fluctuations is to reduce the matrix element P2 for the conduction valence band coupling in the k⋅p theoretical expression. The strength of the potential fluctuations can be described in terms of the electronegativity difference related to chemical disorder. The inclusion of the disorder effect in the (In0.53Al0.47As)x(In0.53Ga0.47As)1−x quaternary system gives a very good fit to the measured data. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.362862

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