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Effect of e-beam irradiation on a p-n junction GaN light emitting diode (1996)

Li, X. ; Gu, S. Q. ; Reuter, E. E. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 2687-2690

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A GaN p-n junction structure was grown on a (0001) sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition using a double buffer layer. The resulting light emitting diode (LED) was further exposed to a low-energy electron beam source. The effect of e-beam exposure on the room-temperature electroluminescence spectra of the LED is reported. It is found that the electroluminescence spectral features change dramatically as a function of the electron-beam exposure time and current density. This is attributed to changes in active Mg concentration. The origin of each electroluminescence band is discussed. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.363131

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