ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Carbon adsorption to the Si(100) surface in the atmosphere with large or with small concentrations of organic carbons is examined by using thermal desorption spectroscopy or x-ray photoelectron spectroscopy. The number of carbon atoms on a Si(100) wafer stored in the pure water, in which the total organic carbon is 285 ppb, becomes larger until a certain time with increasing time stored in pure water, and it keeps constant over that time. On the other hand, that stored in the air in the clean bench, where the concentration of the organic carbon is thought to be low, becomes small, and the increasing rate of the carbon atoms adsorbed on the Si(100) surface is very small. The difference between these results is due to whether the dominant step is the transportation of organic carbons in the atmosphere or it is the adsorption of organic carbons on the Si surface. The former process occurs for the small concentration of the organic carbons in the atmosphere, and the latter process occurs for the large concentration of them. Adsorption of the organic carbons dominates in the entire process in pure water under the present condition, and the transportation of them dominates in the entire process in the air of the clean bench under the present condition. From the relationship between C1s integral intensity and thickness of the native oxide, it is found that the adsorption of the carbon atoms has a close relationship with the growth of the native oxide on the Si surface. The adsorption site of the carbon atoms is also discussed from the viewpoint of stepped growth of the native oxide. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363286
