Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 3804-3807
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We observe the formation of an ordered structure in Si1−xGex films grown on Ge(100) substrates, as well as on Si(100) substrates, by molecular beam epitaxy. The structural characterization of these ordered films is performed. The degree of order in the films is quantitatively measured using x-ray diffraction. The dependence of the degree of order on Ge composition is similar between films on Ge(100) and Si(100) substrates. By careful x-ray diffraction analysis, we find that the degree of order is not equivalent in variants. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363333
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