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Intrinsic carrier concentration and electron effective mass in Hg1−xZnxTe (1997)

Sha, Yi-Gao ; Su, Ching-Hua ; Lehoczky, S. L.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 81 (1997), S. 2245-2249

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The intrinsic carrier concentrations, Fermi energies, and the electron effective masses are calculated for Hg1−xZnxTe with 0〈x≤0.4 and 50 K≤T≤400 K. The numerical calculations are based on the Kane k⋅p model and no further analytical simplification or approximation is made for the energy band structure beyond those inherent in the Kane model. The results are compared to the previous calculations. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.364289

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