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Tunneling and impact ionization at high electric fields in abrupt GaAs p-i-n structures (1997)

Benz, C. ; Claassen, M.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 81 (1997), S. 3181-3185

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: GaAs p-i-n structures with very abrupt doping transitions and different lengths of the quasi-intrinsic zone have been fabricated by molecular beam epitaxy technology. For structures with ultra-thin intrinsic zones, tunnel currents were determined experimentally up to electric fields of 1.9 MV/cm, in good agreement with a modified Kane model. The difference of calculated tunnel current and measured total current in structures which also perform impact ionization is used to fit a Monte Carlo simulation program at high electric fields. Resulting idealized homogeneous-field ionization rates are given which are experimentally verified up to fields of 1.3 MV/cm. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.364147

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