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Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia (1998)

Grandjean, N. ; Massies, J. ; Vennéguès, P. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 83 (1998), S. 1379-1383

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Ammonia is used for growing undoped GaN layers by gas source molecular-beam epitaxy on c-plane sapphire substrates. The growth mode is layer by layer as shown by the observation of reflection high-energy electron diffraction intensity oscillations. The structural quality is studied by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Low-temperature photoluminescence (PL) and reflectivity demonstrate intrinsic excitonic emission. Room-temperature PL exhibits a strong band-edge intensity and a weak deep-level emission, the so-called yellow band. Finally, secondary ion mass spectroscopy is carried out to check the residual impurity levels of Si, C, and O. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.366840

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