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Surface dopant concentration monitoring using noncontact surface charge profiling (1998)

Roman, P. ; Staffa, J. ; Fakhouri, S. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 83 (1998), S. 2297-2300

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: This study is concerned with variations of the concentration of active boron dopant in the near surface region of silicon wafers. Boron can be deactivated by pairing with hydrogen or metals, particularly Cu and Fe, all of which may originate from the surface polishing process. The temperature dependence of boron activation is studied using the surface charge profiling method. Based on the determined activation energy of 1.28 eV it was concluded that in the p-type wafers used in this study initially observed boron deactivation was dominated by its interaction with hydrogen introduced during wafer polishing. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.366972

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