ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Numerical simulation of a submicron 3C–SiC n+−n−n+ ballistic diode, based upon the recently developed Lei–Ting hydrodynamic balance equations, is presented. The electron velocity, electron density, electron temperature, and the electrical potential distributed along the diode are obtained under different bias voltages. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.367069