Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 4324-4333
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Spin splitting of conduction band electrons in In0.53Ga0.47As/In0.77Ga0.23As/InP heterostructures due to spin-orbit coupling is studied by performing Shubnikov–de Haas measurements on nongated and gated Hall bars. From an analysis of the beating pattern in the Shubnikov–de Haas oscillations, the spin-orbit coupling constant is determined. For a symmetric sample no beating pattern and thus no spin splitting is observed. This demonstrates that the k3 contribution to the spin-orbit coupling constant can be neglected. By applying an envelope function theory it is shown that the major contribution to the Rashba spin-orbit coupling originates from the band offset at the interface of the quantum well. Using gated Hall bar structures it is possible to alter the spin-orbit coupling by application of an appropriate gate voltage. A more negative gate voltage leads to a more pronounced asymmetry of the quantum well, which gives rise to a stronger spin-orbit coupling. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.367192
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