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GaN (0001)-(1×1) surfaces: Composition and electronic properties (1998)

Wu, C. I. ; Kahn, A.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 83 (1998), S. 4249-4252

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We use low energy electron diffraction, Auger electron spectroscopy, and ultraviolet and x-ray photoemission spectroscopy to study the surface structure, stoichiometry, and electronic properties of n- and p-type GaN (0001) grown by metal-organic chemical vapor deposition. Ordered (1×1) surfaces with nearly stoichiometric composition are prepared by nitrogen sputtering and annealing. The band bending is found to be 0.75±0.1 eV up and 0.75±0.1 eV down for n- and p-type samples, respectively. The work function, electron affinity, and Ga 3d core level binding energy are also determined. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.367182

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