Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
84 (1998), S. 2906-2908
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report a method for the growth of C60 single crystal thin films using Sb as the surfactant. It is found that the growth mechanism of C60 thin films on the substrates of (001) NaCl was significantly affected by the thin layer of Sb when the substrate temperature is 160 °C. (111) orientated C60 single crystal films were prepared by this method, and the average grain size of our films is about one order of magnitude larger than that of the polycrystalline films grown without Sb. The possible mechanism of the metal enhanced C60 single crystal growth has been discussed. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368445
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