Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
84 (1998), S. 3090-3097
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In situ laser reflectometry and ex situ Rutherford backscattering spectrometry have been used to investigate the ion fluence and temperature dependence of the amorphization process in silicon carbide induced by 3 MeV I2+ irradiation. A comparative study in silicon showed that damage accumulation in silicon carbide proceeds more gradually in the preliminary stage of amorphization. The amorphization fluence depends weakly on temperature below 300 K but strongly above 300 K. Silicon carbide is amorphized more quickly than silicon at elevated temperatures. At very low temperatures a higher ion fluence for the amorphization of silicon carbide is required in comparison to silicon. Owing to this behavior, different mechanisms of damage growth are assumed to be present in these semiconductors. A critical energy density of 5.6×1024 eV/cm3 for the amorphization of the silicon carbide crystal up to the surface has been found at room temperature. Experimental results are compared with predictions of the models proposed by Carter as well as by Morehead and Crowder. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368508
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