ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Metal–oxide nitride–oxide–Si (MONOS) structure was fabricated using the oxidation-nitridation series with helicon-wave O2–Ar and N2–Ar plasmas, respectively. The detrimental effect of Ar ion etching was minimized during the fabrication process by controlling the plasma–sheath width. The top oxide was very thin (∼1–2 nm) as compared with nitride (∼12–13 nm) and bottom oxide (∼7–8 nm). Fowler–Nordheim tunneling electron injection was performed in this MONOS diode for both dc and pulsed stress voltages with the electrical polarity being changed. For the positive stress voltage, the shift of the threshold voltage Vth was negative and larger for the smaller stress voltage. It was higher for the pulsed stress than for the dc one. On the other hand, Vth shift is positive and smaller for the pulsed stress than for the dc one for the negative stress bias. These findings can almost be explained by the avalanche breakdown model together with the effect of the total amount of the injected carries. Terman analysis indicated that the interface state density did not increase after both positive and negative stresses, which was probably due to film structure and the presence of a small amount of Si oxynitride (or Si–N–O bonds) at the insulator/Si interface. Write/erase characteristics were also briefly discussed. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369488
