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Inhomogeneous and thickness-dependent chemical reactivity at GaSe–Si interfaces (1999)

Almeida, J. ; Zacchigna, M. ; Berger, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 7694-7696

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Scanning photoelectron spectromicroscopy experiments on the edge of patterned Si overlayers on GaSe revealed the presence of an inhomogeneous reaction with a metallic-like Ga phase separation. The Si–Se chemically shifted components show lateral variations and a thickness-related SiSe2/SiSex (x=0.5, 1, and 1.5) ratio on a micrometer scale. The dependence of the peak intensities on the overlayer thickness suggests an initial layer-by-layer coverage until (approximate)2 Å, followed by a clustering growth mode. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.370573

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