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Representation of GaP formation by a reduced order surface kinetics model using p-polarized reflectance measurements (1999)

Beeler, S. ; Tran, H. T.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 674-682

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: This contribution presents results on the parameter estimation of rate constants and optical response factors in a reduced order surface kinetics (ROSK) model, which has been developed to describe the decomposition kinetics of the organometallic precursors involved and their incorporation into the film deposition. As a real-time characterization technique, we applied p-polarized reflectance spectroscopy (PRS) during low temperature growth of epitaxial GaP heterostructures on Si(001) substrates by pulsed chemical beam epitaxy. The high surface sensitivity of PRS allows us to follow alterations in the composition and thickness of the surface reaction layer as they are encountered during periodic precursor supply. Linkage of the PRS response to the ROSK model provides the base for the parameter estimation of the reduced order surface kinetics model, giving insights into the organometallic precursor decomposition and growth kinetics. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.370783

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