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Thermally induced conduction type conversion in n-type InP (1999)

Fung, S. ; Zhao, Y. W. ; Beling, C. D. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 2361-2363

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: n-type semiconducting InP is changed into p-type semiconducting by short time annealing at 700 °C. Further annealing for a longer time leads to a second conduction-type conversion changing the material back to n type again but with a much higher resistivity. These conduction conversions indicate the formation of both acceptor and donor defects and the progressive variation of their relative concentrations during annealing. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.371057

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