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Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity (1999)

Laine, T. ; Saarinen, K. ; Hautojärvi, P. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 1888-1897

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We use a low-energy positron beam to study the influence of doping and stoichiometry on the native defects in GaAs grown by molecular-beam epitaxy at 250 °C. Ga vacancies are identified in all samples by measuring the momentum distribution of annihilating core electrons. The charge of VGa is negative in Si-doped samples but neutral in undoped and Be-doped material. We propose that the Ga vacancies are complexed with As antisites in undoped and Be-doped samples and with Si impurities in n-type material. The concentration of Ga vacancies depends on the doping and stoichiometry of growth conditions. It follows generally the trends in the VGa formation energy as a function of the Fermi level position and stoichiometry. The strong loss of free carriers in the As-rich Si-doped samples is attributed to the formation of Ga vacancy complexes, negative ion defects and inactive clusters of Si atoms. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.370984

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