Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 3787-3791
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the observation of quantized jumps due to single-carrier trapping and detrapping at defect states in silicon photoconductors of 103 μm3 in volume. A specifically designed electrical test structure in a low-doped (2×1014 cm−3) silicon crystal was fabricated. It consists in four substrate resistances connected in a Wheatstone bridge. After the exposure to light, the bridge offset voltage recovers its equilibrium value with steps of 5–10 μV, corresponding to the emission or capture of a single carrier. Such structures also display random telegraph signals in the dark, with steps of similar amplitude. This behavior is observed with structures processed on Czochralski-grown substrates and not with those processed on float-zone substrates. Simple calculations based on quantized free carrier concentration variations corroborate the above measurements. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.371288
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