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Broad band p-Ge optical amplifier of terahertz radiation (1999)

Muravjov, A. V. ; Withers, S. H.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 3512-3515

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A solid state broad band amplifier of terahertz radiation (1.5–4 THz), based on intersubband transitions of hot holes in p-Ge is demonstrated. The gain is investigated as a function of applied magnetic and electric fields by transmission measurements using a laser system with two p-Ge active crystals, when one operates as an oscillator and one as an amplifier. A peak gain higher than usually reported for p-Ge lasers has been achieved using time separated excitation of the oscillator and amplifier. Distinct differences in gain dependence on applied fields are noted between low- and high-frequency modes of p-Ge laser operation. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.371250

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