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Hall constant in quantum-sized semimetal Bi films: Electric field effect influence (2000)

Butenko, A. V. ; Shvarts, Dm. ; Sandomirsky, V. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 2634-2640

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report on the influence of a gate voltage on the Hall constant [electric field effect Hall constant (EFE–HC)] in a quantum-sized Bi film. The dependence of EFE–HC on the applied electric field, film thickness, and temperature was measured. The electric field effect induces a change of several tens of percent in the Hall constant under an applied electric field of 108 V/m. The effect depends on the film thickness in an oscillatory manner similar to that observed in other quantum-size characteristics. We present an interpretation of the known temperature maximum of HC in quantum size Bi films in absence of EFE, by considering the temperature dependence of the electron and hole mobilities. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1288166

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