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Moisture diffusion along the TiN/SiO2 interface and in plasma-enhanced chemical vapor deposited SiO2 (2000)

Xu, G. ; Clarke, D. R.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 3695-3698

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The diffusivity of moisture along the TiN/SiO2 interface has been determined by imaging the inward diffusion of 18O and 2D from isotopically labeled water using a secondary ion mass spectroscopy (SIMS) technique. The diffusivity, at room temperature, of the 18O and 2D labeled species along the interface are indistinguishable and have a value of 6.0±2.0×10−13 cm2/s, four orders of magnitude faster than bulk diffusivity of the same species in the plasma-enhanced chemical vapor deposition silica, also determined by SIMS. From 8 to 90 °C, the activation energies for interface and bulk diffusivities of the 2D labeled species are found to be 0.21 and 0.74 eV, respectively. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1289481

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