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The electro-optic properties of interdiffused InGaAs/InP quantum well structures (2000)

Weiss, Bernard L.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 3418-3425

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1285840

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