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EL2, EL3, and EL6 defects in GaAs highly implanted with sulfur (2000)

Yokota, Katsuhiro ; Kuchii, Hideto ; Nakamura, Kazuhiro ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 5017-5021

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Sulfur ions were implanted into a semi-insulating GaAs wafer at 50 keV at a dose of 1×1015 cm−2. The implanted GaAs wafer was annealed at temperatures of 650–1000 °C for 15 min. Deep levels were measured in regions with carrier concentrations lower than 3×1017 cm−3, after layers of various thicknesses were removed from the surface of the wafer. The dominant defects in samples annealed at temperatures lower than 850 °C were EL2 and EL6, while 1000 °C annealed samples exhibited isolated EL2 and EL3 defects. Isolated EL2 defects were observed in regions of carrier concentrations lower than 1×1017 cm−3, and EL3 defects were observed in regions of carrier concentrations higher than 2×1017 cm−3. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1315331

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