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Numerical model for organic light-emitting diodes (2001)

Tutiš, E.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 430-439

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: An extensive numerical model recently developed for the multilayer organic light-emitting diode is described and applied to a set of real devices. The model contains a detailed description of electrical contacts including dipolar layer formation, thermionic and tunneling injection, space charge effects, field dependent mobilities and recombination processes. The model is applied to simulate several single layer devices and the family of bilayer devices made in our group. It provides insight into the energy level shifts, internal electric fields and charge distribution (and consequently recombination) throughout the device. Finally, the analysis is extended to the optimization of bilayer device. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1327286

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