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Resonant interband tunnel diodes with AlGaSb barriers (2001)

Magno, R. ; Bracker, A. S. ; Bennett, B. R.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 5791-5793

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The peak current density of InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling diodes has been enhanced by replacing the AlSb barriers with Al1−xGaxSb that has a narrower band gap. The devices were grown by molecular beam epitaxy and tested at room temperature. Diodes with nominally identical 7-ML-thick ternary alloy barriers with x=0.35 are found to have peak current densities three times larger than those with AlSb barriers. The peak-to-valley current ratio decreases by only one third from 18 for the AlSb diodes to 12 for diodes with the ternary alloy barriers.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1365940

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