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Electronic properties of UIrGe in high magnetic fields (2001)

Chang, S. ; Jung, M. H. ; Nakotte, H.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 7186-7188

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: UIrGe crystallizes in the orthorhombic TiNiSi structure and exhibits a large magnetic anisotropy. Here, we present the results of magnetoresistance and specific-heat studies of single-crystalline UIrGe in magnetic fields up to 18 T applied along the principal axes. The phase boundaries of the zero-field antiferromagnetic phase (TN(approximate)14.1 K) are established, and we find evidence of a field-induced phase above 12.5 T at 2.1 K and 14 T at 2.5 K for magnetic fields applied along the b and c axis, respectively. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1357847

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