Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
89 (2001), S. 8175-8178
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Temperature- and field-dependent electroluminescence and quantum efficiency have been investigated in tris-(8-hydroxy) quinoline aluminum (Alq3) light-emitting diodes over the temperature range from 10 to 300 K. At lower applied voltage, two peaks have been observed in the quantum efficiency with temperature. The two peaks are attributed to the deep trap levels (high-temperature regime) and shallow trap levels (low-temperature regime) in Alq3. With increasing voltage, the high-temperature peak shifts toward lower temperature but no significant shift of the low-temperature peak is observed. At voltage around 10 V, superposition of two peaks causes the apparent saturation in the low-temperature regime of the quantum efficiency. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1364651
|
Location |
Call Number |
Expected |
Availability |
