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Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures (2001)

Frey, T. ; As, D. J. ; Bartels, M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 2631-2634

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The radio-frequency plasma-assisted molecular beam epitaxy of cubic AlyGa1−yN/GaN heterostructures on GaAs(001) substrates is reported. Rutherford backscattering spectroscopy, high resolution x-ray diffraction, and first-order micro-Raman spectroscopy measurements were used to characterize the structural and vibrational properties of the alloy epilayers. The Al content of the alloy is in the range from 0.07〈x〈0.20. X-ray diffraction reciprocal space maps demonstrate the good crystal quality of the cubic (Al, Ga)N/GaN films. The measured Raman shift of the TO phonon mode of the AlyGa1−yN alloy is in good agreement with theoretical calculations. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1345858

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