ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We analyze experimental and simulated photoreflectance spectra of excitonic transitions in semiconductors with a redefined set of fitting parameters in Aspnes' line shape function. The redefinition, based on a comparison with the first derivative of a Gaussian, allows one to directly relate these parameters to the observed experimental spectrum, making them independent of the exponent m. None of the original information, including the underlying physics involved as determined by m, is lost in this process. The physical significance of the fitting parameters is explained. Their usefulness lie in making line shape fitting easier and the possibility of comparing different sets of samples exhibiting inhomogeneities with regard to their broadening, oscillator strengths, and hence, quality. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1379051
