Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 1692-1697
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Following the success of p-Ge hot-hole lasers, there is potential for using other semiconductor materials, notably III–V materials such as GaAs and InSb. Previous analysis had suggested that a large effective mass ratio between the heavy and light holes is advantageous, which implies that InSb would make an excellent hot-hole laser. Using our Monte Carlo simulation of both GaAs and InSb hot-hole lasers in combination with a rate equation model, we see that previously accepted criteria used to predict performance are not always reliable, and we suggest suitable alternatives. The simulation results include gain and gain bandwidth as a function of field strength and laser frequency, and alternative field orientations and photon polarizations are considered. Comparisons are made with bulk p-Ge systems. The optimum conditions predicted by our simulation could then be used in the design of quantum-well hot-hole lasers. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1384492
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