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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3294-3298 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore the origin of visible photoluminescence in nanoscale silicon cones fabricated by reactive ion etching in silicon-on-insulator substrates utilizing rough silver films as masks. Photoluminescence (PL) visible to the naked eye was observed after oxidation and annealing. Samples oxidized at 900 °C exhibit intense yellow/green photoluminescence centered at about 530 nm. Samples oxidized at 1000 °C luminesce in the red-to-infrared region with peak positions between 650 and 730 nm. Transmission electron microscopy characterization is employed to show that PL at 530 nm can be understood in terms of defect states, while the PL at 650–730 nm can be explained by a combination of defect state and quantum confinement effects. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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